Disorder-induced two-dimensional metal-insulator transition in moiré transition metal dichalcogenide multilayers

We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moir\'e multilayer metal dichalcogenides (mTMD) using Coulomb disorder environment as underlying mechanism. In particular, carrier scattering by random charged impurities leads to an effective 2D MIT approximately controlled Ioffe-Regel criterion, which is qualitatively consistent with experiments. find necessary be around $5$-$10\times10^{10}$cm$^{-2}$ order quantitatively explain much, but not all, of phenomenology reported two different experimental groups. Our estimate known content TMDs.